The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 17, 2024

Filed:

Sep. 19, 2019
Applicant:

Hitachi Astemo, Ltd., Hitachinaka, JP;

Inventors:

Masahiro Doi, Hitachinaka, JP;

Yuri Ohara, Hitachinaka, JP;

Takeo Yamashita, Hitachinaka, JP;

Assignee:

Hitachi Astemo, Ltd., Hitachinaka, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G05F 1/565 (2006.01); G05F 1/46 (2006.01); G05F 1/577 (2006.01); H03K 17/22 (2006.01);
U.S. Cl.
CPC ...
G05F 1/565 (2013.01); G05F 1/465 (2013.01); G05F 1/577 (2013.01); H03K 17/223 (2013.01);
Abstract

Provided is a highly versatile and reliable power supply device (power supply ASIC) that can support electronic devices with a wide range of drive currents while suppressing a cost increase, and an electronic control device using the same. An electronic control device includes: a first power supply circuit that outputs a first voltage; a second power supply circuit that generates a second voltage from the first voltage; and a first MOSFET arranged independently of the first power supply circuit and the second power supply circuit. The second power supply circuit includes: a reference power supply that outputs a reference voltage; an amplifier that amplifies the reference voltage; a second MOSFET connected in parallel with the first MOSFET; a voltage detection unit that detects a voltage value of a gate terminal of the first MOSFET; and a switching unit that connects an output from the amplifier to either the gate terminal of the first MOSFET or a gate terminal of the second MOSFET. The switching unit is controlled based on a voltage value at a start detected by the voltage detection unit.


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