The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 10, 2024
Filed:
Sep. 09, 2021
Kioxia Corporation, Tokyo, JP;
Yuta Sato, Yokohama Kanagawa, JP;
Tomomasa Ueda, Yokohama Kanagawa, JP;
Nobuyoshi Saito, Ota Tokyo, JP;
Keiji Ikeda, Kawasaki Kanagawa, JP;
Kioxia Corporation, Tokyo, JP;
Abstract
A semiconductor device of an embodiment is provided with: an oxide semiconductor layer including a first region, a second region, and a third region between the first region and the second region; a gate electrode; a gate insulating layer; a first electrode electrically connected to the first region; a second electrode electrically connected to the second region; a first conductive layer provided at least one of positions between the first region and the first electrode or between the second region and the second electrode and containing a first metal element and at least one element of oxygen (O) or nitrogen (N); and a second conductive layer provided between the oxide semiconductor layer and the first conductive layer and containing oxygen (O) and at least one element selected from indium (In), zinc (Zn), tin (Sn), or cadmium (Cd). The second conductive layer is thicker than the first conductive layer.