The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 10, 2024
Filed:
Nov. 25, 2020
Institute of Microelectronics, Chinese Academy of Sciences, Beijing, CN;
Qi Wang, Beijing, CN;
Yiyang Jiang, Beijing, CN;
Qianhui Li, Beijing, CN;
Zongliang Huo, Beijing, CN;
Tianchun Ye, Beijing, CN;
Abstract
A read-write method includes: sequentially writing, in a first direction, a code word obtained by information-bit encoding into a target memory cell in each layer of memory cell array in the three-dimensional memory; randomly reading the target memory cell in each layer of memory cell array, or sequentially reading the target memory cell in each layer of memory cell array in a second direction; and determining an LLR value of a current target memory cell according to a storage time corresponding to the current target memory cell when reading, a threshold voltage partition corresponding to the current target memory cell when reading, a comprehensive distribution state corresponding to the current target memory cell when reading, and a pre-established LLR table, so as to perform a soft decoding operation on the code word in the current target memory cell based on the LLR value of the current target memory cell.