The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 10, 2024

Filed:

Feb. 14, 2023
Applicant:

Delphi Technologies Ip Limited, St. Michael, BB;

Inventors:

Karthik Naik, Jalan Eunos, SG;

Wong Chuan Ming, Tressure Crest, SG;

Venkata Jaya Sai Praneeth Ammanamanchi, Lamadelaine, LU;

Engel Joseph, Oberkorn, LU;

Assignee:

DELPHI TECHNOLOGIES IP LIMITED, Saint Michael, BB;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03K 17/06 (2006.01); H03K 17/0412 (2006.01); H03K 17/16 (2006.01);
U.S. Cl.
CPC ...
H03K 17/063 (2013.01); H03K 17/04123 (2013.01); H03K 17/165 (2013.01); H03K 2217/0063 (2013.01); H03K 2217/0072 (2013.01);
Abstract

A discrete relay driver circuit that includes a first high side gate drive circuit configured to drive a first high side MOSFET and a second high side gate drive circuit configured to drive a second high side MOSFET. The discrete relay driver circuit also includes a first resistor divider configured to sense voltage from the first high side MOSFET, a second resistor divider configured to sense voltage from the second high side MOSFET, and a first low side gate driver circuit configured to drive a first low side MOSFET. The discrete relay driver circuit also includes a second low side gate driver circuit configured to drive a second low side MOSFET based on a first low side enable signal, and a third low side gate driver circuit configured to drive a third low side MOSFET based on a second low side enable signal.


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