The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 10, 2024

Filed:

Sep. 06, 2019
Applicant:

Sony Corporation, Tokyo, JP;

Inventors:

Kentaro Fujii, Tokyo, JP;

Tatsushi Hamaguchi, Tokyo, JP;

Rintaro Koda, Tokyo, JP;

Assignee:

SONY CORPORATION, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01S 5/183 (2006.01); H01S 5/028 (2006.01); H01S 5/343 (2006.01);
U.S. Cl.
CPC ...
H01S 5/0281 (2013.01); H01S 5/18369 (2013.01); H01S 5/343 (2013.01);
Abstract

A light emitting element comprising a layered structure configured by layering a first light reflecting layerconfigured by layering a plurality of thin films, a light emitting structure, and a second light reflecting layerconfigured by layering a plurality of thin films, wherein the light emitting structureis configured by layering, from the first light reflecting layer side, a first compound semiconductor layer, an active layer, and a second compound semiconductor layer, a second electrodeand an intermediate layerare formed between the second compound semiconductor layerand the second light reflecting layerfrom the second compound semiconductor layer side, and the value of a surface roughness of a second surfaceof the intermediate layerin contact with the second light reflecting layeris less than the value of a surface roughness of a first surfaceof the intermediate layerfacing the second electrode


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