The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 10, 2024
Filed:
Nov. 15, 2022
Xiamen Sanan Optoelectronics Technology Co., Ltd., Xiamen, CN;
Su-hui Lin, Xiamen, CN;
Feng Wang, Xiamen, CN;
Ling-yuan Hong, Xiamen, CN;
Sheng-Hsien Hsu, Xiamen, CN;
Sihe Chen, Xiamen, CN;
Dazhong Chen, Xiamen, CN;
Kang-Wei Peng, Xiamen, CN;
Chia-Hung Chang, Xiamen, CN;
Quanzhou San'an Semiconductor Technology Co., Ltd., Fujian, CN;
Abstract
Disclosed is a light-emitting diode which includes a light-emitting epitaxial layered unit, an insulation layer, a transparent conductive layer, a protective layer, a first electrode, and a second electrode. The light-emitting epitaxial layered unit includes a first semiconductor layer, a second semiconductor layer, and a light-emitting layer sandwiched between the first and second semiconductor layers, and has a first electrode region which includes a pad area and an extension area. The insulation layer is disposed on the first semiconductor layer and at the extension area of the first electrode region. Also disclosed is a method for manufacturing the light-emitting diode.