The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 10, 2024
Filed:
Sep. 11, 2019
Applicant:
South China Normal University, Guangdong, CN;
Inventor:
Richard Notzel, Guangzhou, CN;
Assignee:
SOUTH CHINA NORMAL UNIVERSITY, Guangdong, CN;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/885 (2006.01); H01L 21/02 (2006.01); H01L 29/20 (2006.01); H01L 29/66 (2006.01); H02M 7/06 (2006.01);
U.S. Cl.
CPC ...
H01L 29/885 (2013.01); H01L 21/02381 (2013.01); H01L 21/02433 (2013.01); H01L 21/02488 (2013.01); H01L 21/0254 (2013.01); H01L 21/02631 (2013.01); H01L 29/2003 (2013.01); H01L 29/66204 (2013.01); H02M 7/06 (2013.01);
Abstract
An epitaxial wafer, a method of manufacturing the epitaxial wafer, a diode, and a current rectifier are provided. The epitaxial wafer comprises a Si substrate layer; an insulating layer formed on the Si substrate layer; and a nitride semiconductor layer formed on a surface of the insulating layer facing away from the Si substrate layer; wherein the insulating layer has a thickness configured such that under a forward bias voltage, the insulating layer may allow electrons and holes to pass from one side to the other side of the insulating layer via quantum tunneling so as to allow a forward current flow.