The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 10, 2024
Filed:
Jan. 23, 2022
Fuji Electric Co., Ltd., Kanagawa, JP;
Motoyoshi Kubouchi, Matsumoto, JP;
FUJI ELECTRIC CO., LTD., Kanagawa, JP;
Abstract
Provided is a semiconductor device including: a semiconductor substrate having upper and lower surfaces and throughout which a first-conductivity-type bulk donor is distributed; a first-conductivity-type high concentration region including a center position in a depth direction of the substrate and having a donor concentration higher than a doping concentration of the donors; and an upper surface side oxygen reduction region provided in contact with the upper surface inside the substrate and in which an oxygen chemical concentration decreases as approaching the upper surface. The oxygen chemical concentration distribution may have a maximum value region where the oxygen chemical concentration is 50% or more of the maximum value, a first peak of an impurity chemical concentration may be arranged in an end of the high concentration region in the depth direction, and the peak may be arranged on the upper surface side with respect to or in the maximum value region.