The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 10, 2024
Filed:
Apr. 13, 2023
Novus Semiconductors Co., Ltd., Chengdu, CN;
NOVUS SEMICONDUCTORS CO., LTD., Chengdu, CN;
Abstract
A trench SiC MOSFET integrated with a high-speed flyback diode and a preparation method thereof are provided. The MOSFET is a trench structure, a trench-type gate-controlled diode is added in the vicinity of the MOSFET to solve the problem of electric field concentration at the bottom and corners of a trench, and P-type buried layers are added to the bottom of the trench to decrease the electric field intensity. Moreover, the gate-controlled diode and a body diode of the device are connected in parallel, so the on-voltage drop of the body diode is greatly decreased, thus reducing the loss in the reverse recovery mode. In addition, the gate-controlled diode is a unipolar device without the charge-storage effect, so the reverse recovery current of the body diode can be completely eliminated, thus reducing the dynamic loss.