The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 10, 2024
Filed:
Feb. 24, 2022
Lapis Semiconductor Co., Ltd., Kanagawa, JP;
National University Corporation Shizuoka University, Shizuoka, JP;
Shoji Kawahito, Shizuoka, JP;
Keita Yasutomi, Shizuoka, JP;
Noriyuki Miura, Kanagawa, JP;
Atsushi Yabata, Kanagawa, JP;
NATIONAL UNIVERSITY CORPORATION, Shizuoka, JP;
LAPIS SEMICONDUCTOR CO., LTD., Kanagawa, JP;
Abstract
A semiconductor device in which an SOI substrate having an element region in which circuit elements are formed, an insulation layer having a first surface adjoining the SOI substrate, and a support substrate of a first conductivity type are laminated. On the SOI substrate, a transfer electrode configured to transfer charges generated in the support substrate to a third semiconductor layer is formed in a region different from the element region, and the transfer electrode and the third semiconductor layer are adjacent in plan view.