The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 10, 2024

Filed:

Feb. 10, 2021
Applicant:

Samsung Display Co., Ltd., Yongin-si, KR;

Inventors:

Ki June Lee, Yongin-si, KR;

Ji Hye Kim, Asan-si, KR;

Jung Ha Son, Yongin-si, KR;

Assignee:

SAMSUNG DISPLAY CO., LTD., Yongin-si, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/146 (2006.01); G06V 40/13 (2022.01); H01L 25/18 (2023.01);
U.S. Cl.
CPC ...
H01L 27/1461 (2013.01); G06V 40/1318 (2022.01); H01L 25/18 (2013.01); H01L 27/14612 (2013.01); H01L 27/1463 (2013.01); H01L 27/14692 (2013.01); H01L 27/14625 (2013.01); H01L 27/14636 (2013.01);
Abstract

A fingerprint sensor includes: a thin film transistor disposed on a substrate; a first insulating layer disposed on the thin film transistor; a first sensing electrode disposed on the first insulating layer and connected to the thin film transistor; a second insulating layer disposed on the first sensing electrode and including an opening exposing the first sensing electrode; a sensing semiconductor layer disposed in the opening of the second insulating layer and on the first sensing electrode, and including an N-type semiconductor layer, an I-type semiconductor layer, and a P-type semiconductor layer, and a second sensing electrode disposed on the sensing semiconductor layer. An upper surface of the sensing semiconductor layer and an upper surface of the second insulating layer are coplanar.


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