The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 10, 2024

Filed:

Nov. 01, 2021
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Hoemin Jeong, Suwon-si, KR;

Seungjoo Nah, Gwangju, KR;

Heegeun Jeong, Suwon-si, KR;

Wonmo Chun, Hwaseong-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/146 (2006.01);
U.S. Cl.
CPC ...
H01L 27/14605 (2013.01); H01L 27/14621 (2013.01); H01L 27/14623 (2013.01); H01L 27/14627 (2013.01); H01L 27/1463 (2013.01); H01L 27/14634 (2013.01); H01L 27/14645 (2013.01); H01L 27/14685 (2013.01);
Abstract

An image sensor includes: a substrate including a plurality of first and second pixels; a light blocking pattern providing a plurality of first spaces respectively disposed on the first pixels and at least one second space disposed on the plurality of second pixels; a plurality of color filters respectively disposed in the plurality of first spaces; and a microlens layer including a plurality of first microlenses respectively disposed on the plurality of color filters, at least one filling portion disposed in the at least one second space, and at least one second microlens disposed on the at least one filling portion, wherein the microlenses are disposed at the same height as each other, and wherein the at least one filling portion and the at least one second microlens comprise an integrated structure without an interface between the at least one filling portion and the at least one second microlens.


Find Patent Forward Citations

Loading…