The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 10, 2024

Filed:

Jul. 25, 2019
Applicant:

SK Hynix Inc., Icheon-si, KR;

Inventors:

Sung-Kun Park, Sejong-si, KR;

Sun-Ho Oh, Icheon-si, KR;

Kyoung-In Lee, Icheon-si, KR;

Assignee:

SK HYNIX INC., Icheon-si, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/146 (2006.01);
U.S. Cl.
CPC ...
H01L 27/14603 (2013.01); H01L 27/14612 (2013.01); H01L 27/1463 (2013.01);
Abstract

An image sensor includes a first active region including a first floating diffusion region, a first transistor active region, and a first isolation structure for electrically isolating the first floating diffusion region from the first transistor active region, wherein the first isolation structure comprises a first P-type doped region disposed on one corner of the first active region and a second P-type doped region disposed in a center of the first active region, the first P-typed doped region and the second P-type doped region being electrically coupled to each other.


Find Patent Forward Citations

Park, Sung-Kun. (2024). Image sensor having p-type isolation structure (U.S. Patent No. 12087781). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12087781

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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