The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 10, 2024

Filed:

Apr. 27, 2022
Applicant:

Texas Instruments Incorporated, Dallas, TX (US);

Inventor:

Jeffrey A. West, Dallas, TX (US);

Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/52 (2006.01); H01L 21/78 (2006.01); H01L 23/522 (2006.01); H01L 23/528 (2006.01); H01L 23/60 (2006.01); H01L 25/065 (2023.01);
U.S. Cl.
CPC ...
H01L 23/60 (2013.01); H01L 21/78 (2013.01); H01L 23/5223 (2013.01); H01L 23/5226 (2013.01); H01L 23/5227 (2013.01); H01L 23/528 (2013.01); H01L 25/0655 (2013.01);
Abstract

An electronic device comprises a multilevel metallization structure over a semiconductor layer and including a first region, a second region, a pre-metal level on the semiconductor layer, and N metallization structure levels over the pre-metal level, N being greater than 3. The electronic device also comprises an isolation component in the first region, the isolation component including a first terminal and a second terminal in different respective metallization structure levels, as well as a conductive shield between the first region and the second region in the multilevel metallization structure, the conductive shield including interconnected metal lines and trench vias in the respective metallization structure levels that at least partially encircle the first region.


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