The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 10, 2024
Filed:
Feb. 23, 2024
Renesas Electronics Corporation, Tokyo, JP;
Kazuyuki Omori, Tokyo, JP;
RENESAS ELECTRONICS CORPORATION, Tokyo, JP;
Abstract
A method for manufacturing a semiconductor device comprising (a) preparing a semiconductor substrate, (b) forming semiconductor elements on the semiconductor substrate, (c) forming an interlayer insulating film on the semiconductor substrate so as to cover the semiconductor elements, (d) forming a first implantation layer in the interlayer insulating film by performing a first ion-implantation, (e) forming a contact hole in the interlayer insulating film, (f) forming a conductive film on the interlayer insulating film so as to fill in the contact hole, (g) removing the conductive film located outside the contact hole by a polishing so that the conductive film inside the contact hole remains. In the (g) step, the polishing is also performed on the interlayer insulating film. And during the polishing, a polishing rate of the first implantation layer is different from a polishing rate of the interlayer insulating film other than the first implantation layer.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile