The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 10, 2024

Filed:

Jun. 13, 2022
Applicant:

Applied Materials, Inc., Santa Clara, CA (US);

Inventor:

Frank Tzen-Wen Guo, Danville, CA (US);

Assignee:

Applied Materials, Inc., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 13/00 (2006.01);
U.S. Cl.
CPC ...
G11C 13/003 (2013.01); G11C 2213/79 (2013.01);
Abstract

A selector for a memory cell in a memory array may operate by opening different conductive paths to high and low voltages during set and reset operations. A first transistor may open a conductive path between a high voltage and a terminal of the memory element during a reset operation. Similarly, a second transistor may open a conductive path between a low voltage and the terminal of the memory element during a set operation. Some implementations may add a third transistor in series with the first transistor and a fourth transistor in series with the second transistor. The gates of the third and fourth transistors may be biased at a voltage that is about halfway between the low and high voltages. This selector may use smaller transistors while still facilitating high-voltage set and reset operations on resistive memory elements.


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