The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 10, 2024
Filed:
Jan. 25, 2022
Infineon Technologies Ag, Neubiberg, DE;
Mario Motz, Wernberg, AT;
Infineon Technologies AG, Neubiberg, DE;
Abstract
A stress sensor includes a semiconductor substrate with a first transistor arrangement and a second transistor arrangement. The first transistor arrangement includes a first transistor with a first source-drain channel region and a second transistor with a second source-drain channel region. The first transistor and the second transistor are aligned relative to each other such that the current flow directions in the first and the second source-drain channel regions are opposite to each other. The second transistor arrangement includes a third transistor with a third source-drain channel region and a fourth transistor with a fourth source-drain channel region. The third transistor and the fourth transistor are aligned relative to each other such that the current flow directions in the third and the fourth source-drain channel regions are opposite to each other. The stress sensor generates a gradient-compensated output signal used to determine a mechanical stress acting on the semiconductor substrate.