The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 10, 2024

Filed:

Apr. 27, 2020
Applicant:

Sony Semiconductor Solutions Corporation, Kanagawa, JP;

Inventors:

Sozo Yokogawa, Kanagawa, JP;

Yusuke Moriyama, Kanagawa, JP;

Nobuhiro Kawai, Kanagawa, JP;

Yuhi Yorikado, Kanagawa, JP;

Fumihiko Koga, Kanagawa, JP;

Yoshiki Ebiko, Kanagawa, JP;

Suzunori Endo, Kanagawa, JP;

Hayato Wakabayashi, Kanagawa, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G01C 3/06 (2006.01); H04N 25/705 (2023.01); H04N 25/772 (2023.01); H04N 25/778 (2023.01);
U.S. Cl.
CPC ...
G01C 3/06 (2013.01); H04N 25/705 (2023.01); H04N 25/772 (2023.01); H04N 25/778 (2023.01);
Abstract

A distance measurement accuracy is improved. A solid-state imaging device according to an embodiment includes a pixel array part in which a plurality of pixels is arranged in a matrix, in which each of the pixels includes a plurality of photoelectric conversion units that each photoelectrically converts incident light to generate a charge, a floating diffusion region that accumulates the charge, a plurality of transfer circuits that transfer the charge generated in each of the plurality of photoelectric conversion units to the floating diffusion region, and a first transistor that causes a pixel signal of a voltage value corresponding to a charge amount of the charge accumulated in the floating diffusion region to appear in a signal line.


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