The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 10, 2024

Filed:

Dec. 01, 2022
Applicant:

Bae Systems Information and Electronic Systems Integration Inc., Nashua, NH (US);

Inventors:

Peter G. Schunemann, Hollis, NH (US);

Kevin T. Zawilski, Arlington, MA (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
C30B 29/42 (2006.01); C23C 16/30 (2006.01); C30B 29/44 (2006.01); C30B 33/06 (2006.01);
U.S. Cl.
CPC ...
C30B 33/06 (2013.01); C23C 16/30 (2013.01); C30B 29/42 (2013.01); C30B 29/44 (2013.01); Y10T 428/162 (2015.01);
Abstract

A method of making GaP window slabs having largest dimensions of greater than 4 inches and GaAs IR window slabs having largest dimensions of greater than 8 inches, includes slicing and dicing at least one smaller GaAs or GaP single crystal boule, which can be a commercial boule, to form a plurality of rectangular slabs. The slabs are ground to have precisely perpendicular edges, which are polished to be ultra-flat and ultra-smooth, for example to a flatness of at least λ/10, and a roughness Ra of less than 10 nanometers. The slab edges are then aligned and fused via optical-contacting/bonding to create a large GaAs or GaP slab having negligible bond interface losses. A conductive, doped GaAs or GaP layer can be applied to the window for EMI shielding in a subsequent vacuum deposition step, followed by applying anti-reflection (AR) coatings to one or both of the slab faces.


Find Patent Forward Citations

Loading…