The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 10, 2024

Filed:

May. 14, 2020
Applicants:

Safran, Paris, FR;

Centre National DE LA Recherche Scientifique, Paris, FR;

Universite DE Bordeaux, Bordeaux, FR;

Inventors:

Marjorie Christine Cavarroc, Moissy-Cramayel, FR;

Baptiste Simon Giroire, Bordeaux, FR;

Lionel Teule-Gay, Bordeaux, FR;

Angélique Poulon, Arsac, FR;

Assignees:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C 14/34 (2006.01); C23C 14/00 (2006.01); C23C 14/06 (2006.01); C23C 14/35 (2006.01); H01J 37/34 (2006.01);
U.S. Cl.
CPC ...
C23C 14/3485 (2013.01); C23C 14/0036 (2013.01); C23C 14/0641 (2013.01); C23C 14/35 (2013.01); H01J 37/3405 (2013.01); H01J 37/3426 (2013.01); H01J 37/3467 (2013.01); H01J 2237/332 (2013.01);
Abstract

A process for coating a substrate with tantalum nitride by the high-power impulse magnetron sputtering technique, wherein a tantalum target is used and wherein the coating of the substrate is carried out in an atmosphere containing nitrogen, the bias of the target being controlled during the coating by imposing on it the superposition of a continuous bias at a potential between −300 V and −100 V and of a pulsed bias whose pulses have a potential between −1200 V and −400 V.


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