The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 10, 2024
Filed:
Jan. 13, 2023
National Chung Shan Institute of Science and Technology, Taoyuan, TW;
Chih-Hsing Wang, Taoyuan, TW;
Cheng-Jung Ko, Taoyuan, TW;
Chuen-Ming Gee, Taoyuan, TW;
Chih-Wei Kuo, Taoyuan, TW;
Hsueh-I Chen, Taoyuan, TW;
Jun-Bin Huang, Taoyuan, TW;
Ying-Tsung Chao, Taoyuan, TW;
NATIONAL CHUNG SHAN INSTITUTE OF SCIENCE AND TECHNOLOGY, Taoyuan, TW;
Abstract
A method for preparing a carbide protective layer comprises: (A) mixing a carbide powder, an organic binder, an organic solvent and a sintering aid to form a slurry; (B) spraying the slurry on a surface of a graphite component to form a composite component; (C) subjecting the composite component to a cold isostatic pressing densification process; (D) subjecting the composite component to a constant temperature heat treatment; (E) repeating steps (B)-(D) until a coating is formed on a surface of the composite component; (F) subjecting the coating to a segmented sintering process; (G) obtaining a carbide protective layer used for the surface of the composite component. Accordingly, while the carbide protective layer can be completed by using the wet cold isostatic pressing densification process and the cyclic multiple superimposition method, so that it can improve the corrosion resistance in the silicon carbide crystal growth process environment.