The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 03, 2024
Filed:
Oct. 24, 2019
Applicant:
Iucf-hyu (Industry-university Cooperation Foundation Hanyang University), Seoul, KR;
Inventors:
Jea Gun Park, Seongnam-si, KR;
Jong Ung Baek, Seongnam-si, KR;
Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 43/08 (2006.01); H10B 61/00 (2023.01); H10N 50/10 (2023.01); H10N 50/80 (2023.01); H10N 50/85 (2023.01);
U.S. Cl.
CPC ...
H10N 50/10 (2023.02); H10B 61/20 (2023.02); H10N 50/80 (2023.02); H10N 50/85 (2023.02);
Abstract
Disclosed is a memory device including a lower electrode, a seed layer, a synthetic antiferromagnetic layer, a magnetic tunnel junction, and an upper electrode laminated on a substrate, wherein the magnetic tunnel junction includes a pinned layer, a tunnel barrier layer, and free layers, wherein the free layers include a first free layer, a spacer layer, a coupling layer, a buffer layer, and a second free layer laminated in sequential order.