The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 03, 2024
Filed:
Oct. 03, 2019
Semiconductor Energy Laboratory Co., Ltd., Atsugi, JP;
Satoshi Seo, Kanagawa, JP;
Tsunenori Suzuki, Kanagawa, JP;
Takumu Okuyama, Kanagawa, JP;
Yusuke Takita, Kanagawa, JP;
Naoaki Hashimoto, Kanagawa, JP;
Hiromi Seo, Kanagawa, JP;
Nobuharu Ohsawa, Kanagawa, JP;
Toshiki Sasaki, Kanagawa, JP;
Shunpei Yamazaki, Tokyo, JP;
Semiconductor Energy Laboratory Co., Ltd., Atsugi, JP;
Abstract
A novel light-emitting device is provided. Alternatively, a light-emitting device with high emission efficiency is provided. Alternatively, a light-emitting device having a long lifetime is provided. Alternatively, a light-emitting device having low driving voltage is provided. A light-emitting device including an EL layer including a first layer, a second layer, a third layer, a light-emitting layer, and a fourth layer in this order from the anode side is provided. The first layer includes a first organic compound and a second organic compound. The fourth layer includes a seventh organic compound. The first organic compound exhibits an electron-accepting property with respect to the second organic compound. The HOMO level of the second organic compound is from −5.7 eV to −5.4 eV. The HOMO level of the seventh organic compound is −6.0 eV or higher.