The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 03, 2024
Filed:
Sep. 25, 2020
Applicant:
Semiconductor Energy Laboratory Co., Ltd., Atsugi, JP;
Inventors:
Assignee:
Semiconductor Energy Laboratory Co., Ltd., Atsugi, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/14 (2006.01); H01L 27/12 (2006.01); H01L 29/786 (2006.01); H10B 12/00 (2023.01);
U.S. Cl.
CPC ...
H10B 12/00 (2023.02); H01L 27/1207 (2013.01); H01L 27/1225 (2013.01); H01L 27/124 (2013.01); H01L 27/1255 (2013.01); H01L 29/78648 (2013.01); H01L 29/7869 (2013.01);
Abstract
A memory device with large storage capacity is provided. A NAND memory device includes a plurality of connected memory cells each provided with a writing transistor, a reading transistor, and a capacitor. An oxide semiconductor is used in a semiconductor layer of the writing transistor. The reading transistor includes a back gate. When a reading voltage is applied to the back gate, information stored in the memory cell is read out.