The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 03, 2024

Filed:

Jun. 21, 2023
Applicant:

Epistar Corporation, Hsinchu, TW;

Inventors:

Chao-Hsing Chen, Hsinchu, TW;

Jia-Kuen Wang, Hsinchu, TW;

Wen-Hung Chuang, Hsinchu, TW;

Tzu-Yao Tseng, Hsinchu, TW;

Cheng-Lin Lu, Hsinchu, TW;

Assignee:

EPISTAR CORPORATION, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/40 (2010.01); F21K 9/23 (2016.01); F21K 9/232 (2016.01); F21K 9/69 (2016.01); F21Y 115/10 (2016.01); H01L 33/00 (2010.01); H01L 33/06 (2010.01); H01L 33/12 (2010.01); H01L 33/22 (2010.01); H01L 33/32 (2010.01); H01L 33/42 (2010.01); H01L 33/46 (2010.01); H01L 33/62 (2010.01);
U.S. Cl.
CPC ...
H01L 33/405 (2013.01); H01L 33/22 (2013.01); H01L 33/42 (2013.01); H01L 33/46 (2013.01); H01L 33/62 (2013.01); F21K 9/23 (2016.08); F21K 9/232 (2016.08); F21K 9/69 (2016.08); F21Y 2115/10 (2016.08); H01L 33/0075 (2013.01); H01L 33/06 (2013.01); H01L 33/12 (2013.01); H01L 33/32 (2013.01); H01L 2933/0016 (2013.01); H01L 2933/0025 (2013.01);
Abstract

A light-emitting device includes a semiconductor structure including a first semiconductor layer, a second semiconductor layer on the first semiconductor layer, and an active layer between the first semiconductor layer and the second semiconductor layer, wherein the second semiconductor layer includes a first edge; a reflective structure located on the second semiconductor layer and including an outer edge; a first electrode pad located on the reflective structure, wherein the first electrode pad including an outer side wall adjacent to the outer edge, wherein the outer edge extends beyond the outer side wall and does not exceed the first edge in a cross-sectional view of the light-emitting device.


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