The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 03, 2024

Filed:

Feb. 09, 2021
Applicant:

Samsung Display Co., Ltd., Yongin-si, KR;

Inventors:

Joon Seok Park, Yongin-si, KR;

Myoung Hwa Kim, Seoul, KR;

Tae Sang Kim, Seoul, KR;

Yeon Keon Moon, Hwaseong-si, KR;

Geun Chul Park, Suwon-si, KR;

Jun Hyung Lim, Seoul, KR;

Hye Lim Choi, Yongin-si, KR;

Assignee:

SAMSUNG DISPLAY CO., LTD., Yongin-si, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/12 (2010.01); H01L 27/15 (2006.01); H01L 33/00 (2010.01); H01L 33/56 (2010.01); H01L 33/62 (2010.01);
U.S. Cl.
CPC ...
H01L 33/12 (2013.01); H01L 27/156 (2013.01); H01L 33/0095 (2013.01); H01L 33/56 (2013.01); H01L 33/62 (2013.01);
Abstract

A display device may include a first gate electrode on a substrate, a buffer layer on the first gate electrode, a first active pattern on the buffer layer, overlapping the first gate electrode, and including an oxide semiconductor, a source pattern and a drain pattern respectively on ends of the first active pattern, an insulation layer overlapping the source pattern and the drain pattern on the buffer layer, an oxygen supply pattern on the insulation layer, overlapping the first active pattern, and supplying oxygen to the first active pattern, a second active pattern on the insulation layer and spaced apart from the oxygen supply pattern, the second active pattern including a channel region, and a source region and a drain region, an insulation pattern on the channel region of the second active pattern, and a second gate electrode on the insulation pattern.


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