The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 03, 2024
Filed:
Mar. 17, 2023
Applicant:
Northwestern University, Evanston, IL (US);
Inventor:
Manijeh Razeghi, Wilmette, IL (US);
Assignee:
Northwestern University, Evanston, IL (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/101 (2006.01); H01L 31/0304 (2006.01); H01L 31/0352 (2006.01); H01L 31/103 (2006.01); H01L 31/105 (2006.01); H01L 31/18 (2006.01);
U.S. Cl.
CPC ...
H01L 31/1844 (2013.01); H01L 31/03046 (2013.01); H01L 31/035236 (2013.01); H01L 31/101 (2013.01); H01L 31/1035 (2013.01); H01L 31/105 (2013.01);
Abstract
Diffusion-based and ion implantation-based methods are provided for fabricating planar photodetectors. The methods may be used to fabricate planar photodetectors comprising type II superlattice absorber layers but without mesa structures. The fabricated planar photodetectors exhibit high quantum efficiencies, low dark current densities, and high specific detectivities as compared to photodetectors having mesa structures.
Razeghi, Manijeh. (2024). Methods of fabricating planar infrared photodetectors (U.S. Patent No. 12080823). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12080823
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile