The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 03, 2024
Filed:
Jul. 25, 2023
Applicant:
Socionext Inc., Kanagawa, JP;
Inventor:
Hiroyuki Shimbo, Yokohama, JP;
Assignee:
SOCIONEXT INC., Kanagawa, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/00 (2006.01); H01L 21/8238 (2006.01); H01L 27/088 (2006.01); H01L 27/092 (2006.01); H01L 27/118 (2006.01); H01L 29/06 (2006.01); H01L 29/417 (2006.01); H01L 29/423 (2006.01); H01L 29/775 (2006.01); H01L 29/786 (2006.01); H01L 21/8234 (2006.01); H01L 27/02 (2006.01); H01L 27/12 (2006.01);
U.S. Cl.
CPC ...
H01L 29/78696 (2013.01); H01L 21/8238 (2013.01); H01L 27/088 (2013.01); H01L 27/092 (2013.01); H01L 27/11807 (2013.01); H01L 29/06 (2013.01); H01L 29/0673 (2013.01); H01L 29/41733 (2013.01); H01L 29/42392 (2013.01); H01L 29/775 (2013.01); H01L 21/823412 (2013.01); H01L 21/823475 (2013.01); H01L 27/0207 (2013.01); H01L 2027/11874 (2013.01); H01L 27/1203 (2013.01);
Abstract
Provided is a semiconductor chip including a nanowire field effect transistor (FET) and having a layout configuration effective for making manufacturing the chip easy. A semiconductor chip includes a first block including a standard cell having a nanowire PET and a second block including a nanowire FET. In the first and second blocks, nanowires extending in an X direction have an arrangement pitch in a Y direction of an integer multiple of a pitch P. Pads have an arrangement pitch in the X direction of an integer multiple of a pitch P