The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 03, 2024

Filed:

Jan. 10, 2022
Applicant:

The Board of Trustees of the University of Illinois, Urbana, IL (US);

Inventor:

Edmund G. Seebauer, Urbana, IL (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); C23C 22/82 (2006.01); C23C 22/83 (2006.01); C23F 1/30 (2006.01); H01L 21/3213 (2006.01); H01L 21/67 (2006.01); H01L 27/12 (2006.01); H01L 29/786 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7869 (2013.01); C23C 22/82 (2013.01); C23C 22/83 (2013.01); C23F 1/30 (2013.01); H01L 21/32134 (2013.01); H01L 21/67075 (2013.01); H01L 27/1225 (2013.01);
Abstract

A method of controlling oxygen vacancy concentration in a semiconducting metal oxide includes exposing a treated surface of a crystalline metal oxide to water at a temperature and pressure sufficient to maintain the water in a liquid phase. During the exposure, a portion of the water is adsorbed onto the treated surface and dissociates into atomic oxygen and hydrogen. The atomic oxygen is injected into and diffuses through the crystalline metal oxide, forming isolated oxygen interstitials and oxygen defect complexes. The isolated oxygen interstitials replace oxygen vacancies in the crystalline metal oxide.


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