The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 03, 2024
Filed:
May. 19, 2020
Plessey Semiconductors Limited, Plymouth, GB;
Jun-Youn Kim, Plymouth, GB;
Mohsin Aziz, Plymouth, GB;
John Shannon, Plymouth, GB;
Kevin Stribley, Plymouth, GB;
Ian Daniels, Plymouth, GB;
Plessey Semiconductors Limited, Plymouth, GB;
Abstract
A light emitting diode (LED) precursor is provided. The LED precursor comprises a substrate (), an LED structure () comprising a plurality of Group III-nitride layers, and a passivation layer (). The LED structure comprises a p-type semiconductor layer (), an n-type semiconductor layer (), and an active layer () between the p-type and n-type semiconductor layers. Each of the plurality of Group III-nitride layers comprises a crystalline Group III-nitride. The LED structure has a sidewall () which extends in a plane orthogonal to a () crystal plane of the Group III-nitride layers. The passivation layer is provided on the sidewall of the LED structure such that the passivation layer covers the active layer. The passivation layer comprises a crystalline Group III-nitride with a bandgap higher than a bandgap of the active layer. The LED structure is shaped such that the sidewall of the LED structure is aligned with a non-polar crystal plane of each the Group III-nitride layers of the LED structure.