The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 03, 2024

Filed:

Dec. 13, 2021
Applicant:

Nuvolta Technologies (Hefei) Co., Ltd., Hefei, CN;

Inventors:

John Lin, Carlsbad, CA (US);

Jinbiao Huang, Nashua, NH (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 21/265 (2006.01); H01L 21/8236 (2006.01); H01L 27/088 (2006.01); H01L 29/06 (2006.01); H01L 29/10 (2006.01); H01L 29/423 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0883 (2013.01); H01L 21/26513 (2013.01); H01L 21/8236 (2013.01); H01L 29/0653 (2013.01); H01L 29/1095 (2013.01); H01L 29/4238 (2013.01); H01L 29/66681 (2013.01); H01L 29/7816 (2013.01);
Abstract

An apparatus includes a first drain/source region and a second drain/source region over a substrate, a first gate adjacent to the first drain/source region, the first gate comprising a plurality of first fingers forming a first comb structure, and a second gate adjacent to the second drain/source region, the second gate comprising a plurality of second fingers forming a second comb structure, wherein the plurality of first fingers and the plurality of second fingers are placed in an alternating manner, and wherein the first drain/source region, the second drain/source region, the first gate and the second gate form two back-to-back connected transistors.


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