The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 03, 2024

Filed:

Apr. 25, 2023
Applicant:

Macom Technology Solutions Holdings, Inc., Lowell, MA (US);

Inventors:

James Joseph Brogle, Merrimac, MA (US);

Joseph Gerard Bukowski, Derry, NH (US);

Margaret Mary Barter, Lowell, MA (US);

Timothy Edward Boles, Tyngsboro, MA (US);

Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/06 (2006.01); H01L 21/225 (2006.01); H01L 21/265 (2006.01); H01L 23/66 (2006.01); H01L 27/08 (2006.01); H01L 29/868 (2006.01); H01L 21/822 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0676 (2013.01); H01L 21/2253 (2013.01); H01L 21/2254 (2013.01); H01L 21/26513 (2013.01); H01L 23/66 (2013.01); H01L 27/0814 (2013.01); H01L 29/868 (2013.01); H01L 21/822 (2013.01); H01L 29/6609 (2013.01); H01L 2223/6627 (2013.01); H01L 2223/6666 (2013.01); H01L 2223/6683 (2013.01);
Abstract

A number of diode limiter semiconductor structures are described. The diode limiters can include a hybrid arrangement of diodes with different intrinsic regions, all formed over the same semiconductor substrate. In one example, a diode limiter includes a first diode having a first doped region formed to a first depth into an intrinsic layer of a semiconductor structure, a second diode having a second doped region formed to a second depth into the intrinsic layer of the semiconductor structure, and at least one passive component. The first diode includes a first effective intrinsic region of a first thickness, the second diode includes a second effective intrinsic region of a second thickness. The first thickness is greater than the second thickness. The passive component is over the intrinsic layer and electrically coupled as part of the diode limiter.


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