The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 03, 2024
Filed:
Jul. 12, 2019
Mitsubishi Electric Corporation, Tokyo, JP;
MITSUBISHI ELECTRIC CORPORATION, Tokyo, JP;
Abstract
In order to improve energization capacity, minority carrier injection efficiency is increased. In a semiconductor device, an IGBT includes a first drift layer, a collector region, a base region, an emitter region, an insulating film, a gate electrode, and a first high carrier lifetime region formed at a position closer to the collector region than the base region and having a longer carrier lifetime than the first drift layer. An FWD includes a second drift layer, an anode region, and a second high carrier lifetime region formed at a position closer to the anode region than a lower surface of the second drift layer and having a longer carrier lifetime than the second drift layer.