The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 03, 2024
Filed:
Aug. 09, 2021
The Regents of the University of California, Oakland, CA (US);
The Regents of the University of California, Oakland, CA (US);
Abstract
A semiconductor structure includes a nanofog oxide adhered to an inert 2D or 3D surface or a weakly reactive metal surface, the nanofog oxide consisting essentially of 0.5-2 nm AlOnanoparticles. The nanofog can also consists of sub 1 nm particles. Oxide layers can be formed on the nanofog, for example a bilayer stack of AlO—HfO. Additional examples are from the group consisting of ZrO, HfZrO, silicon or other doped HfOor ZrO, ZrTiO, HfTiO, LaO, YO, GaO, GdGaOx, and alloys thereof, including the ferroelectric phases of HfZrO, silicon or other doped HfOor ZrO. The structure provides the basis for various devices, including MIM capacitors, FET transistors and MOSCAP capacitors.