The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 03, 2024

Filed:

Jun. 19, 2023
Applicant:

Infineon Technologies Austria Ag, Villach, AT;

Inventors:

Clemens Roessler, Villach, AT;

Silke Katharina Auchter, Villach, AT;

Johanna Elisabeth Roessler, Villach, AT;

Gerald Stocker, Goritschach, AT;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01J 49/42 (2006.01); H01J 49/00 (2006.01);
U.S. Cl.
CPC ...
H01J 49/424 (2013.01); H01J 49/0018 (2013.01);
Abstract

A device for trapping ions includes: a first substrate having an upper multi-layer electrode structure implemented at a top side of the first substrate; a second substrate disposed over the first substrate and having a lower multi-layer electrode structure implemented at a bottom side of the second substrate; and one or more first level ion traps configured to trap ions in a space between the first substrate and the second substrate. The one or more first level ion traps includes the upper multi-layer electrode structure of the first substrate and the lower multi-layer electrode structure of the second substrate. A method of controlling trapped ions in a device is also described.


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