The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 03, 2024

Filed:

Apr. 28, 2021
Applicant:

Applied Materials, Inc., Santa Clara, CA (US);

Inventors:

Zhepeng Cong, San Jose, CA (US);

Nyi Oo Myo, San Jose, CA (US);

Tao Sheng, Santa Clara, CA (US);

Yong Zheng, Dublin, CA (US);

Assignee:

APPLIED MATERIALS, INC., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C30B 25/16 (2006.01); C23C 14/50 (2006.01); C23C 14/54 (2006.01); C23C 16/458 (2006.01); C23C 16/46 (2006.01); C23C 16/52 (2006.01); C30B 23/00 (2006.01); C30B 23/06 (2006.01); C30B 25/10 (2006.01); C30B 25/12 (2006.01); G01N 21/55 (2014.01); B41J 2/16 (2006.01); G01B 11/06 (2006.01); H01L 21/02 (2006.01); H01L 21/66 (2006.01); H01L 21/67 (2006.01);
U.S. Cl.
CPC ...
C30B 25/16 (2013.01); C23C 14/50 (2013.01); C23C 14/541 (2013.01); C23C 14/547 (2013.01); C23C 16/4583 (2013.01); C23C 16/46 (2013.01); C23C 16/52 (2013.01); C30B 23/002 (2013.01); C30B 23/063 (2013.01); C30B 25/10 (2013.01); C30B 25/12 (2013.01); G01N 21/55 (2013.01); B01J 2219/00443 (2013.01); B41J 2/1642 (2013.01); G01B 11/0625 (2013.01); G01N 2201/062 (2013.01); H01L 21/02266 (2013.01); H01L 21/02271 (2013.01); H01L 21/67253 (2013.01); H01L 22/12 (2013.01); H01L 22/26 (2013.01);
Abstract

Embodiments of the present disclosure generally relate to apparatus, systems, and methods for in-situ film growth rate monitoring. A thickness of a film on a substrate is monitored during a substrate processing operation that deposits the film on the substrate. The thickness is monitored while the substrate processing operation is conducted. The monitoring includes directing light in a direction toward a crystalline coupon. The direction is perpendicular to a heating direction. In one implementation, a reflectometer system to monitor film growth during substrate processing operations includes a first block that includes a first inner surface. The reflectometer system includes a light emitter disposed in the first block and oriented toward the first inner surface, and a light receiver disposed in the first block and oriented toward the first inner surface. The reflectometer system includes a second block opposing the first block.


Find Patent Forward Citations

Cong, Zhepeng. (2024). In-situ film growth rate monitoring apparatus, systems, and methods for substrate processing (U.S. Patent No. 12077880). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12077880

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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