The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 03, 2024
Filed:
Dec. 23, 2020
Samsung Electronics Co., Ltd., Suwon-si, KR;
Research & Business Foundation Sungkyunkwan University, Gyeonggi-do, KR;
Hyangsook Lee, Suwon-si, KR;
Hyoungsub Kim, Suwon-si, KR;
Wonsik Ahn, Suwon-si, KR;
Eunha Lee, Seoul, KR;
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
RESEARCH & BUSINESS FOUNDATION SUNGKYUNKWAN UNIVERSITY, Suwen-si, KR;
Abstract
Provided are a method of growing a two-dimensional transition metal chalcogenide (TMC) film and a method of manufacturing a device including the two-dimensional TMC film. The method of growing a two-dimensional TMC film includes placing a metal layer having a predetermined pattern on a surface of a substrate; separately supplying a chalcogen precursor to a reaction chamber provided with the substrate; supplying a transition metal precursor to the reaction chamber; and evacuating the chalcogen precursor, the transition metal precursor, and by-products generated therefrom from the reaction chamber, wherein an amount of the chalcogen precursor and an amount of the transition metal precursor supplied to the reaction chamber may be controlled.