The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 03, 2024

Filed:

Apr. 26, 2021
Applicant:

Applied Materials, Inc., Santa Clara, CA (US);

Inventors:

Aykut Aydin, Sunnyvale, CA (US);

Rui Cheng, San Jose, CA (US);

Karthik Janakiraman, San Jose, CA (US);

Assignee:

Applied Materials, Inc., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C23C 16/04 (2006.01); C23C 16/18 (2006.01); C23C 16/40 (2006.01); C23C 22/77 (2006.01); C23C 22/82 (2006.01);
U.S. Cl.
CPC ...
C23C 16/042 (2013.01); C23C 16/18 (2013.01); C23C 16/402 (2013.01); C23C 22/77 (2013.01); C23C 22/82 (2013.01);
Abstract

Exemplary deposition methods may include delivering a boron-containing precursor to a processing region of a semiconductor processing chamber. The methods may include delivering a dopant-containing precursor with the boron-containing precursor. The dopant-containing precursor may include a metal. The methods may include forming a plasma of all precursors within the processing region of the semiconductor processing chamber. The methods may include depositing a doped-boron material on a substrate disposed within the processing region of the semiconductor processing chamber. The doped-boron material may include greater than or about 80 at. % of boron in the doped-boron material.


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