The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 27, 2024

Filed:

May. 17, 2022
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Omar Abdulmonem Mohamed Elsayed, San Jose, CA (US);

Venumadhav Bhagavatula, Santa Clara, CA (US);

Tienyu Chang, Sunnyvale, CA (US);

Siu-Chuang Ivan Lu, San Jose, CA (US);

Sangwon Son, Palo Alto, CA (US);

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H03G 3/30 (2006.01); H03F 3/45 (2006.01); H03K 5/00 (2006.01); H03K 5/01 (2006.01);
U.S. Cl.
CPC ...
H03G 3/30 (2013.01); H03F 3/45475 (2013.01); H03K 5/01 (2013.01); H03G 2201/103 (2013.01); H03K 2005/00286 (2013.01);
Abstract

A variable gain amplifier includes a first transconductor circuit coupled to a first input terminal, a first output terminal, and a second output terminal of the variable gain amplifier, the first transconductor circuit including: a plurality of positive coefficient transistors coupled to the first output terminal and configured to selectively conduct current in response to a first binary code, a plurality of negative coefficient transistors coupled to the second output terminal and configured to selectively conduct current in response to a second binary code, and a plurality of amplifying transistors, each having a gate electrode coupled to the first input terminal, a first electrode coupled to a ground reference, and a second electrode coupled to a pair of coefficient transistors including one of the plurality of positive coefficient transistors and one of the plurality of negative coefficient transistors.


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