The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 27, 2024
Filed:
Nov. 07, 2022
Osaka University, Osaka, JP;
National University Corporation Tokai National Higher Education and Research System, Nagoya, JP;
Nichia Corporation, Anan, JP;
Susumu Kuwabata, Ibaraki, JP;
Taro Uematsu, Suita, JP;
Kazutaka Wajima, Toyonaka, JP;
Tsukasa Torimoto, Nagoya, JP;
Tatsuya Kameyama, Nagoya, JP;
Daisuke Oyamatsu, Tokushima, JP;
OSAKA UNIVERSITY, Osaka, JP;
National University Corporation Tokai National Higher Education and Research System, Nagoya, JP;
NICHIA CORPORATION, Anan, JP;
Abstract
Provided is a method of producing semiconductor nanoparticles that exhibit a band-edge emission, and are superior in quantum yield. The method includes raising the temperature of a first mixture containing a silver (Ag) salt, a salt containing at least one of indium (In) and gallium (Ga), a solid compound that serves as a supply source of sulfur (S), and an organic solvent to a temperature in a range of from 125 □C to 175 □C, and heat-treating, subsequent to the raising of the temperature, the first mixture at a temperature in a range of from 125 □C to 175 □C for three seconds or more to obtain a solution containing semiconductor nanoparticles, and decreasing the temperature of the solution containing semiconductor nanoparticles. The solid compound that serves as a supply source of S contains thiourea.