The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 27, 2024

Filed:

May. 02, 2022
Applicant:

Stmicroelectronics (Research & Development) Limited, Marlow, GB;

Inventors:

Mohammed Al-Rawhani, Glasgow, GB;

Neale Dutton, Edinburgh, GB;

John Kevin Moore, Edinburgh, GB;

Bruce Rae, Edinburgh, GB;

Elisa Lacombe, Edinburgh, GB;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/107 (2006.01); H01L 27/146 (2006.01); H04N 25/705 (2023.01); H04N 25/75 (2023.01);
U.S. Cl.
CPC ...
H01L 31/107 (2013.01); H01L 27/14612 (2013.01); H01L 27/14643 (2013.01); H04N 25/705 (2023.01); H04N 25/75 (2023.01);
Abstract

Disclosed herein is an array of pixels. Each pixel includes a single photon avalanche diode (SPAD) and a transistor circuit. The transistor circuit includes a clamp transistor configured to clamp an anode voltage of the SPAD to be no more than a threshold clamped anode voltage, and a quenching element in series with the clamp transistor and configured to quench the anode voltage of the SPAD when the SPAD is struck by an incoming photon. Readout circuitry is coupled to receive the clamped anode voltage from the transistor circuit and to generate a pixel output therefrom, the threshold clamped anode voltage being below a maximum voltage rating of transistors forming the readout circuitry.


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