The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 27, 2024
Filed:
Nov. 18, 2021
Applicant:
Maxeon Solar Pte. Ltd., Singapore, SG;
Inventor:
David D. Smith, Campbell, CA (US);
Assignee:
MAXEON SOLAR PTE. LTD., Singapore, SG;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/0216 (2014.01); H01L 31/0224 (2006.01); H01L 31/18 (2006.01); H01L 31/0352 (2006.01); H01L 31/0236 (2006.01); H01L 31/028 (2006.01); H01L 31/068 (2012.01); H01L 31/0745 (2012.01); H01L 31/0747 (2012.01); H01L 31/0368 (2006.01); H01L 31/02 (2006.01);
U.S. Cl.
CPC ...
H01L 31/0682 (2013.01); H01L 31/02008 (2013.01); H01L 31/028 (2013.01); H01L 31/02167 (2013.01); H01L 31/02363 (2013.01); H01L 31/02366 (2013.01); H01L 31/022425 (2013.01); H01L 31/022441 (2013.01); H01L 31/022458 (2013.01); H01L 31/03682 (2013.01); H01L 31/035272 (2013.01); H01L 31/035281 (2013.01); H01L 31/068 (2013.01); H01L 31/0745 (2013.01); H01L 31/0747 (2013.01); H01L 31/18 (2013.01); H01L 31/182 (2013.01); H01L 31/1804 (2013.01); Y02E 10/546 (2013.01); Y02E 10/547 (2013.01); Y02P 70/50 (2015.11);
Abstract
A solar cell includes polysilicon P-type and N-type doped regions on a backside of a substrate, such as a silicon wafer. A trench structure separates the P-type doped region from the N-type doped region. Each of the P-type and N-type doped regions may be formed over a thin dielectric layer. The trench structure may include a textured surface for increased solar radiation collection. Among other advantages, the resulting structure increases efficiency by providing isolation between adjacent P-type and N-type doped regions, thereby preventing recombination in a space charge region where the doped regions would have touched.