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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 12074232 B1

PDFFull Text
Date of Patent:
Aug. 27, 2024

Filed:

Nov. 28, 2016

Solar cell emitter region fabrication with differentiated p-type and n-type architectures and incorporating a multi-purpose passivation and contact layer

Applicant:

Maxeon Solar Pte. Ltd., Singapore, SG;

Inventors:

Staffan Westerberg, Sunnyvale, CA (US);

Seung Bum Rim, Palo Alto, CA (US);

Assignee:

Maxeon Solar Pte. Ltd., Singapore, SG;

Attorney:

Schwabe, Williamson & Wyatt, P.C.

Primary Examiner:

Thanh Truc Trinh

Int. Cl.
CPC ...
H01L 31/00 (2006.01); H01L 31/0216 (2014.01); H01L 31/0224 (2006.01); H01L 31/0236 (2006.01); H01L 31/028 (2006.01); H01L 31/0288 (2006.01); H01L 31/0368 (2006.01); H01L 31/0376 (2006.01); H01L 31/068 (2012.01); H01L 31/18 (2006.01); H01L 31/20 (2006.01);
U.S. Cl.
CPC ...
H01L 31/02167 (2013.01); H01L 31/02168 (2013.01); H01L 31/022441 (2013.01); H01L 31/02363 (2013.01); H01L 31/028 (2013.01); H01L 31/0288 (2013.01); H01L 31/03682 (2013.01); H01L 31/03762 (2013.01); H01L 31/0682 (2013.01); H01L 31/182 (2013.01); H01L 31/1868 (2013.01); H01L 31/202 (2013.01); Y02E 10/546 (2013.01); Y02E 10/547 (2013.01); Y02E 10/548 (2013.01); Y02P 70/50 (2015.11);
Abstract

Methods of fabricating solar cell emitter regions with differentiated P-type and N-type architectures and incorporating a multi-purpose passivation and contact layer, and resulting solar cells, are described. In an example, a solar cell includes a substrate having a light-receiving surface and a back surface. A P-type emitter region is disposed on the back surface of the substrate. An N-type emitter region is disposed in a trench formed in the back surface of the substrate. An N-type passivation layer is disposed on the N-type emitter region. A first conductive contact structure is electrically connected to the P-type emitter region. A second conductive contact structure is electrically connected to the N-type emitter region and is in direct contact with the N-type passivation layer.

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