The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 27, 2024

Filed:

Oct. 05, 2022
Applicants:

Zhejiang Jinko Solar Co., Ltd., Zhejiang, CN;

Jinko Solar Co., Ltd., Jiangxi, CN;

Inventors:

Jingsheng Jin, Zhejiang, CN;

Bike Zhang, Zhejiang, CN;

Xinyu Zhang, Zhejiang, CN;

Assignees:

ZHEJIANG JINKO SOLAR CO., LTD., Haining Zhejiang, CN;

JINKO SOLAR CO., LTD., Jiangxi, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/02 (2006.01); H01L 31/0224 (2006.01); H01L 31/0468 (2014.01);
U.S. Cl.
CPC ...
H01L 31/02021 (2013.01); H01L 31/0224 (2013.01); H01L 31/0468 (2014.12);
Abstract

A solar cell, a method for manufacturing the solar cell, and a photovoltaic module are provided. The solar cell includes a substrate, a tunneling dielectric layer, a doped conductive layer, a plurality of first electrodes, at least one transmission layer, and at least one diffusion region. The tunneling dielectric layer and the doped conductive layer are arranged over a first surface of the substrate. The doped conductive layer includes main body portions. Each first electrode is disposed on and electrically connected to a side of a corresponding main body portion facing away from the substrate. Each transmission layer is disposed between a corresponding pair of adjacent main body portions. Each diffusion region is partially located in a corresponding transmission layer and extends into the tunneling dielectric layer and the substrate. A doping ion concentration of each diffusion region is greater than a doping ion concentration of the substrate.


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