The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 27, 2024
Filed:
Sep. 14, 2021
Analog Power Conversion Llc, Bend, OR (US);
Kyosan Electric Manufacturing Co., Ltd., Yokohama, JP;
Amaury Gendron-Hansen, Bend, OR (US);
Dumitru Gheorge Sdrulla, Bend, OR (US);
Leslie Louis Szepesi, Bend, OR (US);
Tetsuya Takata, Yokohama, JP;
Itsuo Yuzurihara, Yokohama, JP;
Tomohiro Yoneyama, Yokohama, JP;
Yu Hosoyamada, Yokohama, JP;
Analog Power Conversion LLC, Bend, OR (US);
Kyosan Electric Manufacturing Co., Ltd., Yokohama, JP;
Abstract
A semiconductor device comprises a semiconductor die having a first region and a second region, wherein an operating temperature of the second region is lower than an operating temperature of the first region. A plurality of first tubs are respectively disposed in the first region, the second region, or both. The semiconductor device further comprises a power device comprising a plurality of power device cells, and a diode having a plurality of diode cells. The power devices cells are disposed within tubs or portions of tubs that are in the first region, and the diode cells are disposed within tubs or portions of tubs that are in the second region. The power device may comprise a vertical metal oxide semiconductor field effect transistor (MOSFET), and the diode may comprise a vertical Schottky barrier diode (SBD).