The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 27, 2024

Filed:

Aug. 02, 2021
Applicant:

Infineon Technologies Ag, Neubiberg, DE;

Inventors:

Christian Philipp Sandow, Haar, DE;

Matteo Dainese, Munich, DE;

Assignee:

Infineon Technologies AG, Neubiberg, DE;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/739 (2006.01); H01L 29/06 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7397 (2013.01); H01L 29/0696 (2013.01); H01L 29/66333 (2013.01);
Abstract

A semiconductor device is proposed. The semiconductor device includes a plurality of trenches extending into in a semiconductor body from a first main surface. A first group of the plurality of trenches includes a gate electrode. A second group of the plurality of trenches includes a source electrode. A third group of the plurality of trenches includes an auxiliary electrode. The source electrode is electrically coupled to a source contact area via a source wiring line and the auxiliary electrode. The source wiring line and the auxiliary electrode are electrically connected in series between the source contact area and the source electrode.


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