The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 27, 2024
Filed:
Nov. 02, 2021
Analog Power Conversion Llc, Bend, OR (US);
Amaury Gendron-Hansen, Bend, OR (US);
Dumitru Gheorge Sdrulla, Bend, OR (US);
Leslie Louis Szepesi, Bend, OR (US);
Analog Power Conversion LLC, Bend, OR (US);
Abstract
A tub of a semiconductor device includes a cool zone with a first projected operating temperature and a hot zone with a second projected operating temperature greater than the first projected operating temperature. A design parameter has a first value in the cool zone and a second value different from the first value in the hot zone. The difference configures the tub to dissipate less heat in the hot zone during operation of the semiconductor device than would be dissipated if the first and second values were equal. The design parameter may be, for example, a tub width, a source structure width, a JFET region width, a channel length, a channel width, a length of a gate, a displacement of a center of the gate relative to a center of a JFET region, a dopant concentration, or a combination thereof.