The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 27, 2024

Filed:

Jul. 09, 2021
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Hyoun-Jee Ha, Hwaseong-si, KR;

Seungwook Lee, Hwaseong-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/146 (2006.01); H01L 27/148 (2006.01);
U.S. Cl.
CPC ...
H01L 27/1463 (2013.01); H01L 27/14603 (2013.01); H01L 27/14621 (2013.01); H01L 27/14627 (2013.01); H01L 27/14636 (2013.01); H01L 27/14831 (2013.01);
Abstract

An image sensor includes a substrate having a first surface and a second surface, which are opposite to each other, the substrate including a unit pixel region including a device isolation pattern adjacent to the first surface and a photoelectric conversion region adjacent to the second surface, a pixel isolation pattern provided in the substrate to define the unit pixel regions, an impurity region in the unit pixel region and being adjacent to a side surface of the device isolation pattern, a gate electrode provided on the first surface, and an auxiliary isolation pattern provided between a first side surface of the gate electrode and the impurity region, when the image sensor is viewed in a plan view. A bottom surface of the auxiliary isolation pattern may be located at a level different from a bottom surface of the device isolation pattern.


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