The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 27, 2024

Filed:

Aug. 21, 2020
Applicant:

Panasonic Intellectual Property Management Co., Ltd., Osaka, JP;

Inventors:

Manabu Yanagihara, Osaka, JP;

Takahiro Sato, Toyama, JP;

Hiroto Yamagiwa, Hyogo, JP;

Masahiro Hikita, Hyogo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 23/48 (2006.01); H01L 23/482 (2006.01); H01L 27/085 (2006.01); H01L 29/778 (2006.01); H01L 27/06 (2006.01); H02M 3/335 (2006.01);
U.S. Cl.
CPC ...
H01L 23/481 (2013.01); H01L 23/4824 (2013.01); H01L 27/085 (2013.01); H01L 29/7786 (2013.01); H01L 27/0605 (2013.01); H02M 3/33569 (2013.01);
Abstract

An integrated semiconductor device includes an Si substrate, and a high-side transistor and a low-side transistor which configure a half-bridge. A source electrode of a unit transistor configuring the high-side transistor and a drain electrode of a unit transistor configuring the low-side transistor are integrated as a common electrode.


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