The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 27, 2024

Filed:

Mar. 11, 2020
Applicant:

Hitachi High-tech Corporation, Tokyo, JP;

Inventor:

Soichiro Eto, Tokyo, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/66 (2006.01); G01B 11/06 (2006.01); H01J 37/22 (2006.01); H01J 37/244 (2006.01); H01J 37/32 (2006.01); H01L 21/3065 (2006.01); H01L 21/67 (2006.01);
U.S. Cl.
CPC ...
H01L 22/26 (2013.01); G01B 11/06 (2013.01); G01B 11/0625 (2013.01); G01B 11/0633 (2013.01); G01B 11/0666 (2013.01); G01B 11/0683 (2013.01); H01J 37/22 (2013.01); H01J 37/244 (2013.01); H01J 37/32082 (2013.01); H01J 37/32917 (2013.01); H01J 37/32926 (2013.01); H01J 37/32963 (2013.01); H01J 37/32972 (2013.01); H01L 21/3065 (2013.01); H01L 21/67253 (2013.01); H01L 22/12 (2013.01); H01J 2237/2445 (2013.01); H01J 2237/24578 (2013.01); H01J 2237/3343 (2013.01);
Abstract

A plasma processing apparatus and method with an improved processing yield, the plasma processing apparatus including detector configured to detect an intensity of a first light of a plurality of wavelengths in a first wavelength range and an intensity of a second light of a plurality of wavelengths in a second wavelength range, the first light being obtained by receiving a light which is emitted into the processing chamber from a light source disposed outside the processing chamber and which is reflected by an upper surface of the wafer, and the second light being a light transmitted from the light source without passing through the processing chamber; and a determination unit configured to determine a remaining film thickness of the film layer by comparing the intensity of the first light corrected using a change rate of the intensity of the second light.


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